MUN5215T1G ON Semiconductor, MUN5215T1G Datasheet - Page 6

• Manufacturer Part Number: MUN5215T1G
• Description: TRANS BRT NPN 100MA 50V SOT-323
• Manufacturer: ON Semiconductor

Specifications of MUN5215T1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Rf Transistor Case: SC-70
• No. Of Pins: 3
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
0.1
4
2
1
0
3
1
0
0
I
C
/I
B
= 10
10
Figure 4. Output Capacitance
Figure 2. V
V
20
R
I
C
, REVERSE BIAS VOLTAGE (VOLTS)
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS - - MUN5211T1G
20
CE(sat)
0.1
10
1
0
V
versus I
Figure 6. Input Voltage versus Output Current
30
O
= 0.2 V
T
A
40
= --25C
10
C
f = 1 MHz
I
T
E
40
75C
A
I
= 0 V
C
= 25C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25C
20
50
T
50
A
= --25C
6
0.001
1000
75C
0.01
30
100
100
0.1
10
10
1
1
0
Figure 5. Output Current versus Input Voltage
75C
1
40
25C
2
Figure 3. DC Current Gain
25C
I
T
C
A
V
, COLLECTOR CURRENT (mA)
3
in
= --25C
, INPUT VOLTAGE (VOLTS)
50
4
10
5
6
7
T
8
V
A
CE
= 75C
V
O
= 10 V
--25C
= 5 V
25C
9
100
10