MUN5232T1G ON Semiconductor, MUN5232T1G Datasheet - Page 10
![TRANS BRT NPN 100MA 50V SOT-323](/photos/5/30/53065/sc___70_sot___323__419___04_sml.jpg)
MUN5232T1G
Manufacturer Part Number
MUN5232T1G
Description
TRANS BRT NPN 100MA 50V SOT-323
Manufacturer
ON Semiconductor
Datasheet
1.MUN5235DW1T1G.pdf
(16 pages)
Specifications of MUN5232T1G
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
202mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUN5232T1G
Manufacturer:
ON Semiconductor
Quantity:
2 049
Company:
Part Number:
MUN5232T1G
Manufacturer:
ON Semiconductor
Quantity:
2 300
Company:
Part Number:
MUN5232T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MUN5232T1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.001
4.5
3.5
2.5
1.5
0.5
0.01
0.1
4
3
2
1
0
0
1
0
I
5
C
/I
B
V
R
Figure 24. Output Capacitance
= 10
10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 22. V
, COLLECTOR CURRENT (mA)
15
--25C
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215T1G
20
20
25
0.1
CE(sat)
25C
10
1
0
Figure 26. Input Voltage versus Output Current
30
T
30
A
75C
versus I
= --25C
75C
35
10
f = 1 MHz
I
T
I
E
C
A
40
25C
, COLLECTOR CURRENT (mA)
C
= 0 V
= 25C
40
http://onsemi.com
45
20
50
50
10
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 25. Output Current versus Input Voltage
75C
V
T
1
O
A
T
A
= 0.2 V
40
= --25C
= --25C
2
Figure 23. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
25C
50
4
5
10
75C
25C
6
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10