BCR 108 B6327 Infineon Technologies, BCR 108 B6327 Datasheet - Page 3
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BCR 108 B6327
Manufacturer Part Number
BCR 108 B6327
Description
TRANSISTOR NPN DGTL SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BCR_108S_E6327.pdf
(12 pages)
Specifications of BCR 108 B6327
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
170MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR108B6327XT
SP000056348
SP000056348
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
Collector-emitter saturation voltage
I
Input off voltage
I
Input on voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
EB
CB
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 10 mA, I
= 100 µA, V
= 2 mA, V
= 10 mA, V
= 5 V, I
= 40 V, I
= 10 V, f = 1 MHz
C
E
CE
CE
B
E
B
= 0
CE
= 0
CE
= 0.5 mA
= 0
= 0
1)
= 5 V
= 0.3 V
= 5 V, f = 1 MHz
= 5 V
A
= 25°C, unless otherwise specified
1)
3
f
C
Symbol
V
V
I
I
h
V
V
V
R
R
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
cb
1
1
/R
2
0.042 0.047 0.052 -
min.
0.4
0.5
1.5
50
50
70
-
-
-
-
-
Values
typ.
170
2.2
2
-
-
-
-
-
-
-
-
max.
100
164
0.3
0.8
1.1
2.9
BCR108...
2007-07-24
-
-
-
-
-
MHz
pF
Unit
V
nA
µA
-
V
k