BCR 108 E6433 Infineon Technologies, BCR 108 E6433 Datasheet - Page 6
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BCR 108 E6433
Manufacturer Part Number
BCR 108 E6433
Description
TRANSISTOR NPN DGTL SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BCR_108S_E6327.pdf
(12 pages)
Specifications of BCR 108 E6433
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
170MHz
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
2.2 KOhms
Typical Resistor Ratio
0.047
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR108E6433XT
SP000010737
SP000010737
Permissible Pulse Load R
BCR108
Permissible Puls Load R
BCR108F
K/W
K/W
10
10
10
10
10
10
10
10
10
-1
-1
3
2
1
0
2
1
0
10
10
-6
-6
10
10
-5
-5
10
10
-4
-4
10
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-3
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
thJS
10
10
=
-2
-2
=
( t
( t
p
s
s
)
t
t
p
p
p
)
10
10
0
0
6
Permissible Pulse Load
P
BCR108
Permissible Pulse Load
P
BCR108F
totmax
totmax
10
10
10
10
10
10
10
10
-
3
2
1
0
3
2
1
0
10
10
/ P
/ P
-6
-6
totDC
totDC
10
10
-5
-5
=
=
10
10
( t
( t
p
p
-4
-4
)
)
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
-3
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
BCR108...
-2
-2
2007-07-24
s
s
t
t
p
p
10
10
0
0