BCR 112 E6327 Infineon Technologies, BCR 112 E6327 Datasheet - Page 4
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BCR 112 E6327
Manufacturer Part Number
BCR 112 E6327
Description
TRANSISTOR NPN DGTL AF SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BCR_112_E6327.pdf
(11 pages)
Specifications of BCR 112 E6327
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
140MHz
Power - Max
200mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
4.7 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR112E6327XT
SP000010747
SP000010747
DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
10
= 5 V (common emitter configuration)
= 0.3V (common emitter configuration)
V
-1
-1
3
2
1
0
1
0
10
10
-4
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-4
10
FE
i (on)
-3
-40 °C
-25 °C
25 °C
85 °C
125 °C
=
10
= (I
(I
-3
C
)
C
10
)
-2
10
-2
A
I
I
C
C
A
10
10
-1
-1
4
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
0.35
0.25
0.15
0.05
10
10
0.5
0.4
0.3
0.2
0.1
= 5V (common emitter configuration)
V
V
-1
0
1
0
10
10
= (I
-3
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
), I
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
/I
-4
B
i(off)
= 20
10
10
=
-3
-2
(I
C
)
BCR112...
2007-09-17
10
A
-2
I
I
C
C
A
10
10
-1
-1