BCR 142 B6327 Infineon Technologies, BCR 142 B6327 Datasheet - Page 4

• Manufacturer Part Number: BCR 142 B6327
• Description: TRANSISTOR NPN DGTL AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 142 B6327

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 22 KOhms
• Typical Resistor Ratio: 0.47
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR142B6327XT; SP000010774

Total power dissipation P
BCR142
Total power dissipation P
BCR142W
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= (T
= (T
S
S
)
)
T
T
S
S
150
150
4
Total power dissipation P
BCR142F
Permissible Pulse Load R
BCR142
K/W
mW
10
300
250
225
200
175
150
125
100
10
10
10
10
75
50
25
-1
0
3
2
1
0
10
0
-6
15
10
30
-5
45
10
-4
60
75
10
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
90 105 120 °C
tot
thJS
10
= (T
BCR142...
-2
=
2007-09-17
S
(t
)
s
T
p
t
p
S
)
150
10
0