BCR 183 E6327 Infineon Technologies

BCR 183 E6327

Manufacturer Part Number

BCR 183 E6327

Description

TRANSISTOR PNP DGTL AF SOT-23

Manufacturer

Infineon Technologies

Specifications of BCR 183 E6327

Package / Case

TO-236-3, SC-59, SOT-23-3

Transistor Type

PNP - Pre-Biased

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

10K

Resistor - Emitter Base (r2) (ohms)

10K

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 5mA, 5V

Vce Saturation (max) @ Ib, Ic

300mV @ 500µA, 10mA

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Configuration

Single

Transistor Polarity

PNP

Typical Input Resistor

10 KOhms

Typical Resistor Ratio

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

50 V

Peak Dc Collector Current

100 mA

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BCR183E6327XT
SP000010794

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Related keywords

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BCR 183 E6327 RoHS