MMUN2233LT1G ON Semiconductor, MMUN2233LT1G Datasheet - Page 3

• Manufacturer Part Number: MMUN2233LT1G
• Description: TRANS BRT NPN 100MA 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2233LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 80
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Collector Emitter Voltage V(br)ceo: 50V
• Base Input Resistor R1: 4.7kohm
• Base-emitter Resistor R2: 47kohm
• Resistor Ratio, R1 / R2: 0.1
• No. Of Pins: 3
• Dc Collector Current: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMUN2233LT1GOSTR

Final Product/Process Change Notification # 16165
AFFECTED DEVICE LIST:
MMUN2111LT1
MMUN2111LT1G
MMUN2111LT3G
MMUN2112LT1G
MMUN2113LT1G
MMUN2113LT3G
MMUN2114LT1G
MMUN2115LT1
MMUN2115LT1G
MMUN2116LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2211LT1
MMUN2211LT1G
MMUN2211LT3G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2233LT1G
MMUN2234LT1
MMUN2234LT1G
MMUN2238LT1G
NSVMMUN2232LT1G
SMMUN1003LT1
SMMUN1003LT1G
SMMUN1004LT1
SMMUN1004LT1G
SMMUN2111LT1
SMMUN2111LT1G
SMMUN2111LT3
SMMUN2111LT3G
SMMUN2113LT1
SMMUN2113LT1G
SMMUN2114LT1G
SMMUN2116LT1
SMMUN2116LT1G
SMMUN2211LT1
SMMUN2211LT1G
SMMUN2211LT3
SMMUN2211LT3G
SMMUN2213LT1G
SMMUN2213LT3
SMMUN2213LT3G
SMMUN2214LT1
SMMUN2214LT1G
SMMUN2216LT1
SMMUN2216LT1G
Issue Date: 14 Oct 2008
Rev.14 Jun 2007
Page 3 of 3