MMUN2233LT1G ON Semiconductor, MMUN2233LT1G Datasheet - Page 2

• Manufacturer Part Number: MMUN2233LT1G
• Description: TRANS BRT NPN 100MA 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2233LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 80
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Collector Emitter Voltage V(br)ceo: 50V
• Base Input Resistor R1: 4.7kohm
• Base-emitter Resistor R2: 47kohm
• Resistor Ratio, R1 / R2: 0.1
• No. Of Pins: 3
• Dc Collector Current: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMUN2233LT1GOSTR

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 3), (I
DC Current Gain
Collector-Emitter Saturation Voltage
(V
(V
(I
(I
(I
C
C
C
EB
CE
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 6.0 V, I
= 10 V, I
B
B
B
C
C
= 5.0 mA)
= 0.3 mA)
= 1 mA)
= 5 mA)
= 0)
Characteristic
(Note 3)
CB
CE
= 50 V, I
C
= 50 V, I
= 10 mA, I
(T
E
A
= 0)
B
= 25°C unless otherwise noted)
= 0)
C
E
= 2.0 mA, I
= 0)
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2233LT1G
MMUN2234LT1G
MMUN2238LT1G
MMUN2241LT1G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2232LT1G
MMUN2233LT1G
MMUN2234LT1G
MMUN2238LT1G
MMUN2241LT1G
MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2233LT1G
MMUN2234LT1G
MMUN2215LT1G
MMUN2216LT1G
MMUN2232LT1G
MMUN2238LT1G
MMUN2230LT1G
MMUN2231LT1G
MMUN2241LT1G
MMUN2211LT1G
MMUN2211LT1G
MMUN2211LT1G
http://onsemi.com
B
= 0)
2
V
V
Symbol
V
(BR)CBO
(BR)CEO
I
I
I
CE(sat)
h
CBO
CEO
EBO
FE
Min
160
160
160
160
3.0
8.0
50
50
35
60
80
80
15
80
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
100
140
140
350
350
200
150
350
350
5.0
60
15
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.18
0.13
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
4.0
0.1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc