MMUN2233LT1G ON Semiconductor, MMUN2233LT1G Datasheet - Page 9

• Manufacturer Part Number: MMUN2233LT1G
• Description: TRANS BRT NPN 100MA 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2233LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 80
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Collector Emitter Voltage V(br)ceo: 50V
• Base Input Resistor R1: 4.7kohm
• Base-emitter Resistor R2: 47kohm
• Resistor Ratio, R1 / R2: 0.1
• No. Of Pins: 3
• Dc Collector Current: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMUN2233LT1GOSTR

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Issue Date: 11 Jul 2008
Rev.07-02-06
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