MMUN2231LT1G ON Semiconductor, MMUN2231LT1G Datasheet - Page 14
MMUN2231LT1G
Manufacturer Part Number
MMUN2231LT1G
Description
TRANS BRT NPN 100MA 50V SOT-23
Manufacturer
ON Semiconductor
Datasheet
1.MMUN2211LT3G.pdf
(18 pages)
Specifications of MMUN2231LT1G
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Polarity
NPN
Collector-emitter Voltage
50V
Dc Current Gain (min)
8
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMUN2231LT1G
MMUN2231LT1GOSTR
MMUN2231LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMUN2231LT1G
Manufacturer:
ON Semiconductor
Quantity:
36 000
Company:
Part Number:
MMUN2231LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMUN2231LT1G
Manufacturer:
LRC/乐山
Quantity:
20 000
Product Bulletin #16134
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Issue Date: 11 Jul 2008
Rev.07-02-06
Page 14 of 14