DTC114TM3T5G ON Semiconductor, DTC114TM3T5G Datasheet - Page 2

• Manufacturer Part Number: DTC114TM3T5G
• Description: TRANS NPN 50V 100MA 10K SOT-723
• Manufacturer: ON Semiconductor

Specifications of DTC114TM3T5G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 260mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
*Available upon request.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 × 1.0 inch pad.
THERMAL CHARACTERISTICS
DEVICE MARKING AND RESISTOR VALUES
Specifications Brochure, BRD8011/D.
DTC114EM3T5G
DTC124EM3T5G
DTC144EM3T5G
DTC114YM3T5G
DTC114TM3T5G
DTC143TM3T5G
DTC123EM3T5G
DTC143EM3T5G
DTC143ZM3T5G*
DTC124XM3T5G*
DTC123JM3T5G
DTC115EM3T5G
DTC144WM3T5G*
DTC144TM3T5G
Total Device Dissipation,
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation,
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
FR−4 Board (Note 1) @ T
Derate above 25°C
FR−4 Board (Note 2) @ T
Derate above 25°C
Device
A
A
= 25°C
= 25°C
Characteristic
Marking
8C
8D
8H
8M
8N
8A
8B
8E
8F
8K
8P
8T
8J
8L
http://onsemi.com
R1 (K)
100
4.7
2.2
4.7
4.7
2.2
10
22
47
10
10
22
47
47
2
R2 (K)
100
2.2
4.7
10
22
47
47
47
47
47
22
∞
∞
∞
(Pb−Free)
SOT−723
Package
Symbol
T
R
R
J
P
P
, T
qJA
qJA
D
D
stg
−55 to +150
8000/Tape & Reel
Max
260
480
600
205
2.0
4.8
Shipping
†
mW/°C
mW/°C
°C/W
°C/W
Unit
mW
mW
°C