DTC115EM3T5G ON Semiconductor, DTC115EM3T5G Datasheet - Page 8

• Manufacturer Part Number: DTC115EM3T5G
• Description: TRANS NPN 50V 100/100K SOT-723
• Manufacturer: ON Semiconductor

Specifications of DTC115EM3T5G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Current - Collector Cutoff (max): 500nA
• Power - Max: 260mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC115EM3T5G; DTC115EM3T5GOSTR

0.1
10
0.001
1
0.01
4.5
3.5
2.5
1.5
0.5
0.1
4
3
2
1
0
0
1
Figure 21. Input Voltage versus Output Current
0
0
V
O
I
C
= 0.2 V
2
/I
B
= 10
10
4
Figure 19. Output Capacitance
V
Figure 17. V
I
6
C
R
20
, COLLECTOR CURRENT (mA)
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
75 C
8
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YM3T5G
20
10
15 20
CE(sat)
40
T
30
A
= −25 C
versus I
25 30
75 C
T
A
= −25 C
25 C
f = 1 MHz
l
T
60
E
40
DTA114EM3T5G Series
A
35 40
C
= 0 V
= 25 C
http://onsemi.com
25 C
45 50
50
80
8
100
180
160
140
120
100
10
80
60
40
20
Figure 22. Inexpensive, Unregulated Current Source
1
0
1
0
Figure 20. Output Current versus Input Voltage
V
CE
2
= 10 V
4
Typical Application
2
6
for PNP BRTs
Figure 18. DC Current Gain
I
C
8
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
10
T
4
A
15 20 40 50 60 70 80 90
= 75 C
−25 C
−25 C
6
25 C
V
O
= 5 V
T
A
+12 V
= 75 C
8
25 C
LOAD
10
100