FJV3106RMTF Fairchild Semiconductor, FJV3106RMTF Datasheet
FJV3106RMTF
Manufacturer Part Number
FJV3106RMTF
Description
TRANSISTOR NPN 50V 100MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJV3106RMTF.pdf
(4 pages)
Specifications of FJV3106RMTF
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
• Complement to FJV4106R
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
I
h
V
C
f
V
V
R
R
C
CBO
T
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
I
I
ob
1
1
(off)
(on)
/R
CBO
CEO
Symbol
(sat)
2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
=10K , R
Parameter
(Bias Resistor Built In)
2
=47K )
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
FJV3106R
I
I
V
V
I
V
f=1.0MHz
V
V
V
C
C
C
CB
CE
CE
CB
CE
CE
=10 A, I
=100 A, I
=10mA, I
=40V, I
=5V, I
=10mA, I
=10V, I
=5V, I
=0.3V, I
Test Condition
Marking
C
C
E
E
B
C
=5mA
=100 A
=0
C
B
=0
=0.5mA
=5mA
=0
=1mA
E
=0
R 2 6
Min.
0.19
0.3
50
50
68
7
Equivalent Circuit
B
1. Base 2. Emitter 3. Collector
-55 ~ 150
Value
100
200
150
3
50
50
10
Typ.
0.21
250
3.7
R1
10
R2
1
Max.
0.24
0.1
0.3
1.4
13
SOT-23
C
E
Units
mW
2
mA
V
V
V
Rev. A, July 2002
C
C
Units
MHz
K
pF
V
V
V
V
V
A
Related parts for FJV3106RMTF
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FJV3106RMTF Summary of contents
Page 1
... Output Capacitance ob f Current Gain Bandwidth Product T V (off) Input Off Voltage I V (on) Input On Voltage I R Input Resistor Resistor Ratio 1 2 ©2002 Fairchild Semiconductor Corporation FJV3106R (Bias Resistor Built In) =47K ) 2 Marking =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = ...
Page 2
... Typical Characteristics 1000 100 [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 10k 1k 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 V (off)[V], INPUT OFF VOLTAGE I Figure 3. Input Off Voltage ©2002 Fairchild Semiconductor Corporation 100 10K 47K 0.1 10 100 0.1 400 350 R = 10K 1 R ...
Page 3
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, July 2002 ...
Page 4
CROSSVOLT â â â â ...