FJV4109RMTF Fairchild Semiconductor, FJV4109RMTF Datasheet
FJV4109RMTF
Manufacturer Part Number
FJV4109RMTF
Description
TRANSISTOR PNP 40V 100MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJV4109RMTF.pdf
(4 pages)
Specifications of FJV4109RMTF
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=4.7K )
• Complement to FJV3109R
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
I
h
V
C
f
R
C
CBO
T
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
ob
CBO
CEO
Symbol
(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Resistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
(Bias Resistor Built In)
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
FJV4109R
I
I
V
V
I
V
f=1MHz
V
C
C
C
CB
CE
CB
CE
= -100 A, I
= -1mA, I
= -10mA, I
= -30V, I
= -5V, I
= -10V, I
= -10V, I
Marking
Test Condition
B
C
R 7 9
=0
E
E
C
= -1mA
B
E
=0
= -1mA
=0
= -5mA
=0
Min.
100
-40
3.2
-40
1. Base 2. Emitter 3. Collector
B
Equivalent Circuit
-55 ~ 150
Value
-100
200
150
3
-40
-40
-5
Typ.
200
5.5
4.7
R
1
Max.
-0.1
-0.3
600
6.2
SOT-23
C
E
Units
Rev. A, August 2002
mW
2
mA
V
V
V
C
C
Units
MHz
K
pF
V
V
V
A
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FJV4109RMTF Summary of contents
Page 1
... CBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE C Output Capacitance ob f Current Gain Bandwidth Product T R Input Resistor ©2002 Fairchild Semiconductor Corporation FJV4109R (Bias Resistor Built In) Marking =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 ...
Page 2
... I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 400 350 300 250 200 150 100 100 C], AMBIENT TEMPERATURE a Figure 3. Power Derating ©2002 Fairchild Semiconductor Corporation -1000 4.7K -100 - -10 -100 Figure 2. Collector-Emitter Saturation Voltage 125 150 175 I = 10I 4.7k -10 -100 I [mA], COLLECTOR CURRENT C Rev ...
Page 3
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, August 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...