FJX4010RTF Fairchild Semiconductor, FJX4010RTF Datasheet
FJX4010RTF
Manufacturer Part Number
FJX4010RTF
Description
TRANSISTOR PNP 40V 100MA SOT-323
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJX4010RTF.pdf
(4 pages)
Specifications of FJX4010RTF
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FJX4010RTF
Manufacturer:
ALLEGRO
Quantity:
20 980
©2002 Fairchild Semiconductor Corporation
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=10K )
• Complement to FJX3010R
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
I
h
V
C
f
R
C
CBO
T
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
ob
CBO
CEO
Symbol
(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Resistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
(Bias Resistor Built In)
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
FJX4010R
I
I
V
V
I
V
f=1MHz
V
C
E
C
CB
CE
CB
CE
= -1mA, I
= -100 A, I
= -10mA, I
= -30V, I
= -5V, I
= -10V, I
= -10V, I
Test Condition
Marking
B
C
=0
E
E
C
= -1mA
B
E
=0
= -1mA
=0
= -5mA
=0
S60
1. Base 2. Emitter 3. Collector
Min.
100
-40
-40
7
-55 ~ 150
3
B
Equivalent Circuit
Value
-100
200
150
-40
-40
-5
Typ.
200
5.5
10
R
1
Max.
-0.1
-0.3
600
13
SOT-323
Rev. A3, August 2002
2
Units
C
E
mW
mA
V
V
V
C
C
Units
MHz
K
pF
V
V
V
A
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FJX4010RTF Summary of contents
Page 1
... DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE C Output Capacitance ob f Current Gain Bandwidth Product T R Input Resistor ©2002 Fairchild Semiconductor Corporation FJX4010R (Bias Resistor Built In) Marking S60 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 A, I ...
Page 2
... I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 280 240 200 160 120 100 C], AMBIENT TEMPERATURE a Figure 3. Power Derating ©2002 Fairchild Semiconductor Corporation -1000 10K -100 - -10 -100 Figure 2. Collector-Emitter Saturation 125 150 175 I = 10I 10k -10 -100 -1000 I [mA], COLLECTOR CURRENT C Rev. A3, August 2002 ...
Page 3
... Package Dimensions 2.00±0.20 1.25±0.10 1.00±0.10 ©2002 Fairchild Semiconductor Corporation SOT-323 2.10±0.10 0.95±0.15 ±0.10 +0.05 0.05 –0.02 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 3° 0.90 1.30±0.10 Dimensions in Millimeters Rev. A3, August 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...