FJX3012RTF Fairchild Semiconductor, FJX3012RTF Datasheet
FJX3012RTF
Manufacturer Part Number
FJX3012RTF
Description
TRANSISTOR NPN 40V 100MA SOT-323
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJX3012RTF.pdf
(3 pages)
Specifications of FJX3012RTF
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Resistor - Base (r1) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=47K )
• Complement to FJX4012R
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
I
h
V
C
f
R
C
CBO
T
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
ob
CBO
CEO
Symbol
(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Resistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
(Bias Resistor Built In)
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
FJX3012R
I
I
V
V
I
V
f=1MHz
V
C
E
C
CB
CE
CB
CE
=1mA, I
=100 A, I
=10mA, I
=30V, I
=5V, I
=10V, I
=10V, I
Test Condition
Marking
B
C
=0
E
B
E
C
=1mA
E
=0
=1mA
=0
=5mA
=0
S 1 2
1. Base 2. Emitter 3. Collector
Min.
100
40
40
32
B
-55 ~ 150
Equivalent Circuit
3
Value
100
200
150
40
40
5
Typ.
250
3.7
47
R
1
Max.
600
0.1
0.3
62
SOT-323
C
E
Rev. A3, August 2002
2
Units
mW
mA
V
V
V
C
C
Units
MHz
K
pF
V
V
V
A
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FJX3012RTF Summary of contents
Page 1
... CBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE C Output Capacitance ob f Current Gain Bandwidth Product T R Input Resistor ©2002 Fairchild Semiconductor Corporation FJX3012R (Bias Resistor Built In) Marking =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 ...
Page 2
... Package Dimensions 2.00±0.20 1.25±0.10 1.00±0.10 ©2002 Fairchild Semiconductor Corporation SOT-323 2.10±0.10 0.95±0.15 ±0.10 +0.05 0.05 –0.02 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 3° 0.90 1.30±0.10 Dimensions in Millimeters Rev. A3, August 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...