MMUN2241LT1G ON Semiconductor, MMUN2241LT1G Datasheet - Page 2

TRANS PREBIASED NPN 50V SOT23

MMUN2241LT1G

Manufacturer Part Number
MMUN2241LT1G
Description
TRANS PREBIASED NPN 50V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMUN2241LT1G

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMUN2241LT1GOS
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 3), (I
DC Current Gain
Collector-Emitter Saturation Voltage
(V
(V
(I
(I
(I
C
C
C
EB
CE
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 6.0 V, I
= 10 V, I
B
B
B
C
C
= 5.0 mA)
= 0.3 mA)
= 1 mA)
= 5 mA)
= 0)
Characteristic
(Note 3)
CB
CE
= 50 V, I
C
= 50 V, I
= 10 mA, I
(T
E
A
= 0)
B
= 25°C unless otherwise noted)
= 0)
C
E
= 2.0 mA, I
= 0)
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MMUN2213LT1G
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MMUN2212LT1G
MMUN2213LT1G
MMUN2214LT1G
MMUN2233LT1G
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MMUN2216LT1G
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MMUN2211LT1G
MMUN2211LT1G
http://onsemi.com
B
= 0)
2
V
V
Symbol
V
(BR)CBO
(BR)CEO
I
I
I
CE(sat)
h
CBO
CEO
EBO
FE
Min
160
160
160
160
3.0
8.0
50
50
35
60
80
80
15
80
80
Typ
100
140
140
350
350
200
150
350
350
5.0
60
15
30
Max
0.18
0.13
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
4.0
0.1
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc

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