DTA123JM3T5G ON Semiconductor, DTA123JM3T5G Datasheet - Page 4

• Manufacturer Part Number: DTA123JM3T5G
• Description: TRANS PNP 50V 2.2/47K SOT-723
• Manufacturer: ON Semiconductor

Specifications of DTA123JM3T5G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 260mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
Input Resistor
Resistor Ratio
/
DTA114EM3T5G/DTA124EM3T5G/DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G/DTA143TM3T5G
DTA123EM3T5G/DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA144WM3T5G
DTA115EM3T5G
Characteristic
300
250
200
150
100
50
0
−50
(T
A
= 25 C unless otherwise noted) (Continued)
DTA114EM3T5G
DTA124EM3T5G
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA115EM3T5G
DTA144WM3T5G
DTA114EM3T5G Series
0
T
Figure 1. Derating Curve
A
, AMBIENT TEMPERATURE ( C)
R
http://onsemi.com
qJA
= 480 C/W
50
4
Symbol
R
R1
1
100
/R
2
0.055
0.038
15.4
32.9
15.4
1.54
32.9
0.17
0.38
Min
7.0
7.0
7.0
3.3
1.5
3.3
3.3
0.8
0.8
1.7
70
−
150
0.047
0.21
0.47
Typ
100
4.7
2.2
4.7
4.7
2.2
1.0
1.0
0.1
2.1
10
22
47
10
10
22
47
−
0.185
0.056
Max
28.6
61.1
28.6
2.86
61.1
0.25
0.56
130
6.1
2.9
6.1
6.1
1.2
1.2
2.6
13
13
13
−
Unit
kW