MMUN2130LT1G ON Semiconductor, MMUN2130LT1G Datasheet - Page 7

• Manufacturer Part Number: MMUN2130LT1G
• Description: TRANS BRT PNP 50V SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMUN2130LT1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
0.8
0.6
0.4
0.2
1
1
0
0
0
I
C
/I
B
= 10
Figure 14. Output Capacitance
10
V
Figure 12. V
R
10
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
100
0.1
20
10
1
0
TYPICAL ELECTRICAL CHARACTERISTICS
T
Figure 16. Input Voltage versus Output Current
A
= -25°C
30
versus I
75°C
10
30
C
f = 1 MHz
l
T
25°C
E
T
A
40
A
I
= 0 V
C
= 25°C
= -25°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
MMUN2113LT1
20
40
50
7
75°C
25°C
0.001
1000
0.01
100
100
30
0.1
10
10
1
1
0
Figure 15. Output Current versus Input Voltage
V
O
1
= 2 V
40
2
Figure 13. DC Current Gain
I
C
3
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (VOLTS)
50
V
4
O
= 5 V
5
10
T
A
6
= 75°C
T
A
7
= 75°C
-25°C
8
25°C
-25°C
25°C
9
100
10