STC03DE220HP STMicroelectronics, STC03DE220HP Datasheet - Page 3

• Manufacturer Part Number: STC03DE220HP
• Description: TRANS ESBT 2200V 3A BIPO TO247-4
• Manufacturer: STMicroelectronics
• Series: ESBT®r

Specifications of STC03DE220HP

• Transistor Type: NPN - Emitter Switched Bipolar
• Applications: Gate Driver
• Voltage - Rated: 2200V (2.2kV)
• Current Rating: 3A
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8438-5

2
Electrical characteristics
(T
Table 5.
Symbol
V
V
V
V
case
Q
I
I
I
I
V
GS(OS)
CS(SS)
BS(OS)
SB(OS)
V
CS(ON)
CS(dyn)
CS(dyn)
BS(ON)
GS(th)
C
GS(tot)
h
CSW
t
FE
t
iss
s
f
= 25 °C; unless otherwise specified)
Collector cut-off
current
(V
Base cut-off current
(I
Source cut-off current
(I
Gate-source leakage
current (V
Collector-source ON
voltage
DC current gain
Base-source ON
voltage
Gate threshold voltage V
Input capacitance
(V
Gate-source Charge
(V
INDUCTIVE LOAD
Storage time
Fall time
Collector-source
dynamic voltage
(0.5 µs)
Collector-source
dynamic voltage
(1 µs)
Maximum collector-
source voltage at turn-
off without snubber
Electrical characteristics
C
C
BS
GS
CB
=0, V
=0, V
= V
= V
= 0)
Parameter
GS
GS
GS
CB
BS
= 0)
= 0)
= 0)
= 0)
= 0)
Doc ID 14720 Rev 2
V
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
V
V
I
t
V
V
I
t
R
C
C
B
peak
B
peak
GS
GS
GS
GS
GS
GS
GS
GS
CS
BS
SB
CS
CS
BS
CS
CS
Clamp
CC
CC
G
= 0.3 A
= 0.3 A
= 1.8 A
= 1.5 A
= 47 Ω
= 30 V
= 9 V
= 10 V I
= 10 V I
= V
=15 V
= 2200 V
= ± 20 V
= 10 V I
= 1 V V
= 1 V V
=10 V I
= 25 V
= 10 V
= V
= 10 V
= V
= 10 V
= 500 ns
= 500 ns
= 1760 V
GS
Clamp
Clamp
Test conditions
C
C
h
I
C
C
GS
GS
B
f = 1 MHz
= 400 V
= 400 V
FE
= 1.5 A I
= 1.5 A I
V
= 3 A
= 3 A
= 250 µA
GS
=10 V I
=10 V I
= 5
= 10 V
I
R
I
I
Bpeak
R
R
C
I
t
Bpeak
I
I
G
C
p
I
B
I
B
B
B
C
C
G
B
C
G
= 1.5 A
= 4 µs
= 47 Ω
= 1.5 A
= 0.15 A
= 0.15 A
= 0.6 A
= 0.3 A
=1.5 A
=3 A
= 47 Ω
= 0.6 A
= 3 A
= 47 Ω
= 3 A
= 3 A
2200
Min.
1.5
1040
Typ.
0.25
0.82
12.5
750
0.2
2.2
7.6
5.8
15
10
20
1
Max.
100
100
500
10
3
Unit
nC
µA
µA
µA
nA
pF
ns
ns
V
V
V
V
V
V
V
V
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