LMN200B02-7 Diodes Inc, LMN200B02-7 Datasheet - Page 4

• Manufacturer Part Number: LMN200B02-7
• Description: MCU LOAD SWITCH 200MA SOT-363
• Manufacturer: Diodes Inc

Specifications of LMN200B02-7

• Transistor Type: PNP Pre-Biased, N-Channel Pre-Biased
• Applications: Load Switch
• Voltage - Rated: 50V PNP, 60V N-Channel
• Current Rating: 200mA PNP, 115mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: LMN200B02DITR

Electrical Characteristics:
N-MOSFET with Gate Pull-Down Resistor (Q2)
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BV
Zero Gate Voltage Drain Current (Drain Leakage
Current)
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage)
Static Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On-Resistance
Forward Transconductance
Gate Pull-Down Resistor, +/- 30%
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward
Current
Notes:
DS30658 Rev. 7 - 2
4. Short duration pulse test used to minimize self-heating effect.
350
300
250
200
150
100
50
0
0
Characteristic
25
(Note 3)
T , AMBIENT TEMPERATURE (°C)
Ambient Temperature (Total Device)
Fig. 3 Max Power Dissipation vs.
A
50
75
DSS
100
125
Typical Characteristics
Symbol
V
150
V
R
V
(BR)DSS
I
I
I
t
t
I
GSSF
GSSR
C
DS(on)
D(on)
DS(on)
C
C
D(on)
D(off)
V
GS(th)
g
I
DSS
R3
SM
I
FS
oss
SD
rss
S
iss
175
www.diodes.com
Min
500
4 of 9
60
80
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
0.10
0.15
0.90
Typ
@T
240
350
1.9
1.6
1.4
37
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
A
= 25°C unless otherwise specified
-0.95
Max
0.95
3.75
115
800
2.2
1.5
1.5
⎯
⎯
⎯
⎯
⎯
50
25
20
40
1
3
2
5
Unit
mA
mA
mA
mS
mA
mA
KΩ
μA
pF
pF
pF
ns
ns
Ω
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1MHz
V
I
R
V
D
GS
GS
GS
GS
DS
GS
GS
GS
DS
GS
GS
DS
DS
DS
DD
G
GS
= 200mA,
= 25 Ohm, R
= 0V, I
=0V, V
= 20V, V
= -20V, V
= V
= 5V, I
= 10V, I
= 10V,
≥2
= 5V, ID = 50mA
= 10V, ID = 500mA
≥2
≥2
= -25V, V
= 30V, V
= 0V, I
Test Condition
X
X
X
GS
V
V
V
DS(ON)
DS(ON)
DS(ON)
, I
D
D
S
DS
D
D
= 10μA
= 115 mA
DS
= 50mA
GS
© Diodes Incorporated
⎯
⎯
⎯
DS
GS
= 0.25mA
= 60V
= 115mA
, I
, I
= 0V
=10V,
L
= 0V
= 0V,
D
D
LMN200B02
= 150 Ohm
= 115 mA
= 200 mA