BT134W-600,135 NXP Semiconductors, BT134W-600,135 Datasheet - Page 2

• Manufacturer Part Number: BT134W-600,135
• Description: TRIAC 600V 1A 35MA SOT223
• Manufacturer: NXP Semiconductors
• Type: TRIACr

Specifications of BT134W-600,135

• Package / Case: TO-261-4, TO-261AA
• Triac Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 10A, 11A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 1A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 11 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 70 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.5 V @ 2 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Hold Current: 15mA
• Gate Trigger Current (max): 70mA
• Gate Trigger Voltage (max): 1.5V
• Package Type: SOT-223
• Peak Repeat Off Current: 500uA
• Peak Surge On-state Current (max): 11A
• On State Voltage(max): 1.5@2AV
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1774-2; 934000960135; BT134W-600 /T3

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
August 1997
Triacs
sensitive gate
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-sp
th j-a
D
/dt
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
CONDITIONS
full or half cycle
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:14
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; gate open circuit
I
dI
T
TM
D
D
D
D
D
D
DM
G
= 2 A
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 1.5 A; V
= 67% V
DRM(max)
T
GT
GT
T
T
DRM(max)
= 0.1 A
= 0.1 A
; T
D
= 0.1 A
= 0.1 A
= 0.1 A; T
= V
j
2
= 125 ˚C
DRM(max)
; T
j
= 125 ˚C;
j
; I
= 125 ˚C
G
= 0.1 A;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
MIN.
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BT134W series E
TYP.
TYP.
TYP.
156
2.5
4.0
5.0
3.0
2.5
4.0
2.2
1.2
0.7
0.4
0.1
70
11
10
30
2
-
Product specification
MAX.
MAX.
MAX.
1.5
1.5
0.5
15
10
10
10
25
15
20
15
20
15
-
-
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s