AVS12CB STMicroelectronics, AVS12CB Datasheet - Page 3

• Manufacturer Part Number: AVS12CB
• Description: IC SWITCH AUTOMATIC VOLT TO220AB
• Manufacturer: STMicroelectronics

Specifications of AVS12CB

• Mfg Application Notes: AVS10,12, AN390 Appl Note
• Triac Type: Internally Triggered
• Mounting Type: Through Hole
• Configuration: Single
• Voltage - Off State: 600V
• Current - Non Rep. Surge 50, 60hz (itsm): 100A, 105A
• Current - On State (it (rms)) (max): 12A
• Package / Case: TO-220AB
• Current - On State (it (rms) (max): 12A
• On State Rms Current It(rms): 12A
• Peak Non Rep Surge Current Itsm 50hz: 105A
• Operating Temperature Range: 0°C To +70°C
• Thyristor Case: TO-220AB
• No. Of Pins: 3
• Rohs Compliant: Yes
• Peak Repetitive Off-state Voltage, Vdrm: 600V
• Uninsulated Package: AVS12CB
• It(rms): 12A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Hold (ih) (max): -
• Current - Gate Trigger (igt) (max): -
• Voltage - Gate Trigger (vgt) (max): -
• Other names: 497-2564-5

DC GENERAL ELECTRICAL CHARACTERISTICS
TRIAC AVS12CB
* For either polarity of electrode A 2 voltage with reference to electrode A 1
THERMAL RESISTANCE
TRIAC AVS12CB
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 60Hz). (Curves are cut
off by (dI/dt)c limitation)
Rth (j-c) DC
Rth (j-c) AC
Symbol
Symbol
Rth (j-a)
I
V
DRM
V
TM
GD
*
*
Junction to ambient
Junction to case for DC
Junction to case for 360° conduction angle (F = 50Hz)
V
I
V
TM
D
DRM
= V
= 17A
rated
DRM
RL = 3.3k
t
p
Gate open
= 10ms
Pulse duration > 20µs
Parameter
Parameter
Fig. 2: Correlation between maximum mean
power dissipation and maximum allowable tem-
perature (Tamb and Tcase) for different thermal
resistances heatsink + contact.
T
T
T
T
j
j
j
j
= 110°C
= 110°C
= 25°C
= 25°C
Min.
0.2
Value
Value
2.3
60
3
Max.
1.75
500
10
AVS12
°C/W
Unit
Unit
C/W
C/W
V
V
A
3/7