BTA26-800BWRG STMicroelectronics, BTA26-800BWRG Datasheet - Page 3

• Manufacturer Part Number: BTA26-800BWRG
• Description: TRIAC 25A 800V INSUL TOP3
• Manufacturer: STMicroelectronics
• Series: Snubberless™r
• Type: TRIACr

Specifications of BTA26-800BWRG

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 75mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 250A, 260A
• Current - On State (it (rms)) (max): 25A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TOP-3 Insulated
• Current - On State (it (rms) (max): 25A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 75mA
• Gate Trigger Current (max): 50mA
• Gate Trigger Voltage (max): 1.3V
• Package Type: TOP Insulated
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 260A
• On State Voltage(max): 1.55@35AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Current, Average Input: 25 A
• Current, Dc Gate-trigger: 35 to 50 mA
• Current, On-state, Rms, Maximum: 25 A
• Current, Surge, Non-repetitive Peak Forward: 260 A
• Dissipation, Gate-power, Average: 1 W
• Resistance, Thermal, Junction To Case: 1.1 °C⁄W
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -40 °C
• Thermal Resistance, Junction To Ambient: 50 °C⁄W
• Voltage, Dc Gate-trigger: 1.3 V (Max.)
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 75 mA
• Forward Voltage Drop: 1.55 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4172-5

BTA24, BTB24, BTA25, BTA26, BTB26, T25
Table 4.
1. minimum I
2. for both polarities of A2 referenced to A1.
Table 5.
1. for both polarities of A2 referenced to A1.
Table 6.
1. S = Copper surface under tab.
(dV/dt)c
Symbol
Symbol
dV/dt
Symbol
V
R
I
R
I
V
GT
R
H
V
V
I
I
TM
DRM
RRM
th(j-c)
th(j-a)
t0
(2)
I
d
GT
GD
L
(1)
(1)
(1)
)
(2)
(1)
(2)
GT
Electrical characteristics (T
standard (4 quadrants), BTB24...B, BTA25...B, BTA26...B, BTB26...B
Static characteristics
Thermal resistance
V
V
I
I
V
(dI/dt)c = 13.3 A/ms
Junction to case (AC)
Junction to ambient
T
G
I
Threshold voltage
Dynamic resistance
V
is guaranted at 5% of I
TM
D
D
D
DRM
= 500 mA
= 1.2 I
= 12 V
= V
= 67 %V
= 35 A
DRM
= V
GT
RRM
DRM
R
R
L
Test Conditions
L
= 3.3 kΩ T
t
p
= 33 Ω
gate open
= 380 µs
GT
max.
(1)
S = 1 cm
j
Test Conditions
= 125° C
j
= 25° C, unless otherwise specified),
²
Parameter
T
T
T
T
T
j
j
j
j
j
= 25° C
= 125° C
= 125° C
= 25° C
= 125° C
TOP 3
D
RD91 Insulated / TOP3 Insulated
TO-220AB Insulated
D
TOP3 / TOP3 Insulated
TO-220AB / TO-220AB Insulated
2
2
PAK / TO-220AB
PAK
T
T
Quadrant
I - III - IV
j
j
I - II - III
= 125° C
= 125° C
ALL
ALL
IV
II
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
Value
Value
1.55
0.85
100
160
500
1.3
0.2
16
50
80
70
10
5
3
Characteristics
Value
0.6
0.8
0.9
1.7
45
50
60
Unit
V/µs
V/µs
° C/W
° C/W
mA
mA
mA
Unit
Unit
mΩ
mA
V
V
µA
V
V
3/12