BTA40-800B STMicroelectronics, BTA40-800B Datasheet - Page 4

• Manufacturer Part Number: BTA40-800B
• Description: TRIAC 800V 40A RD-91
• Manufacturer: STMicroelectronics

Specifications of BTA40-800B

• Triac Type: Standard
• Mounting Type: Chassis Mount
• Configuration: Single
• Current - Hold (ih) (max): 80mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 400A, 420A
• Current - On State (it (rms)) (max): 40A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: RD91-3 (Insulated)
• Current - On State (it (rms) (max): 40A
• Current, Average Input: 40 A
• Current, Dc Gate-trigger: 50 mA
• Current, Dc Holding: 80 mA (Max.)
• Current, On-state, Rms, Maximum: 40 A
• Current, Surge, Non-repetitive Peak Forward: 420 A for 60 Hz, 400 A for 50 Hz
• Dissipation, Gate-power, Average: 1 W
• Package Type: RD91
• Resistance, Thermal, Junction To Case: 0.9 °C⁄W
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -40 °C
• Thermal Resistance, Junction To Ambient: 50 °C⁄W
• Voltage, Dc Gate-trigger: 1.3 V (Max.)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2405; 497-2405-5; 497-2405

BTA40 and BTA/BTB41 Series
4/6
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 5: Surge peak on-state current versus
number of cycles.
450
400
350
300
250
200
150
100
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
1.E+00
1.E-01
1.E-02
1.E-03
50
-40
0
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
1
ITSM (A)
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
K=[Zth/Rth]
IH & IL
-20
Zth(j-c)
IGT
Repetitive
Tc=70°C
0
BTA/BTB41
Zth(j-a)
20
10
Tj initial=25°C
Non repetitive
Number of cycles
40
Tj(°C)
tp (s)
60
100
80
100
t=20ms
One cycle
120
1000
140
400
100
Fig. 4:
values).
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
10000
Fig. 8: Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
1000
1
100
0.1
0.5
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
ITM (A)
0.01
ITSM (A), I²t (A²s)
1.0
dI/dt limitation:
Tj max
50A/µs
On-state characteristics
1.5
Tj=25°C
1.0
2.0
0.10
(dV/dt)c (V/µs)
2.5
VTM (V)
tp (ms)
3.0
10.0
ITSM
1.00
3.5
4.0
(maximum
Tj initial=25°C
Vto = 0.85 V
Rd = 10 m
Tj max.:
4.5
I²t
100.0
10.00
5.0