MAC08BT1G ON Semiconductor, MAC08BT1G Datasheet

THYRISTOR TRIAC .8A 200V SOT223

MAC08BT1G

Manufacturer Part Number
MAC08BT1G
Description
THYRISTOR TRIAC .8A 200V SOT223
Manufacturer
ON Semiconductor
Datasheet

Specifications of MAC08BT1G

Triac Type
Logic - Sensitive Gate
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
5mA
Voltage - Off State
200V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
8A @ 60Hz
Current - On State (it (rms)) (max)
800mA
Voltage - Gate Trigger (vgt) (max)
2V
Package / Case
TO-261-4, TO-261AA
Current - On State (it (rms) (max)
800mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MAC08BT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAC08BT1G
Manufacturer:
ON
Quantity:
11 307
Part Number:
MAC08BT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MAC08BT1, MAC08MT1
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
December, 2005 − Rev. 5
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, 50 to 60 Hz, Gate Open,
T
On−State Current RMS (T
(Full Sine Wave 50 to 60 Hz)
Peak Non−repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
Circuit Fusing Considerations
(Pulse Width = 8.3 ms)
Peak Gate Power
(T
Average Gate Power
(T
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction−to−Ambient
PCB Mounted per Figure 1
Thermal Resistance, Junction−to−Tab
Measured on MT2 Tab Adjacent to Epoxy
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
Designed for use in solid state relays, MPU interface, TTL logic and
J
C
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2005
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
C
C
= 25 to
= 25 C)
DRM
= 80 C, Pulse Width v 1.0 ms)
= 80 C, t = 8.3 ms)
and V
110 C)
Characteristic
RRM
Rating
for all types can be applied on a continuous basis. Blocking
(T
J
C
= 25 C unless otherwise noted)
= 80 C)
Preferred Device
MAC08MT1
MAC08BT1
Symbol
Symbol
I
P
V
V
T(RMS)
R
R
I
P
T
G(AV)
DRM,
TSM
RRM
I
T
T
GM
qJA
qJT
2
stg
L
J
t
−40 to +110
−40 to +150
Value
Max
200
600
156
260
0.8
8.0
0.4
5.0
0.1
25
1
Unit
Unit
A
C/W
C/W
W
W
V
A
A
2
C
C
C
s
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MAC08BT1
MAC08BT1G
MAC08MT1
MAC08MT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
1
2
3
4
MT2
ORDERING INFORMATION
200 thru 600 VOLTS
A
Y
W
AC08X = Device Code
G
0.8 AMPERE RMS
http://onsemi.com
PIN ASSIGNMENT
CASE 318E
STYLE 11
SOT−223
(Pb−Free)
(Pb−Free)
= Assembly Location
= Year
= Work Week
= Pb−Free Package
SOT−223
SOT−223
SOT−223
SOT−223
Package
TRIAC
x= B or M
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
1
1000 Tape & Reel
1000 Tape & Reel
1000 Tape & Reel
1000 Tape & Reel
G
MARKING
DIAGRAM
AC08x G
Shipping
MAC08BT1/D
2
MT1
AYW
4
G
3

Related parts for MAC08BT1G

MAC08BT1G Summary of contents

Page 1

... 5 0.1 W G(AV) T −40 to +110 −40 to +150 C stg MAC08BT1 MAC08BT1G Symbol Max Unit R 156 C/W qJA MAC08MT1 MAC08MT1G R 25 C/W qJT †For information on tape and reel specifications, T 260 C including part orientation and tape sizes, please L refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

Page 2

... Critical Rate−of−Rise of Off State Voltage (V = Rated 110 C, Gate Open, Exponential Method) pk DRM C 300 msec, Duty Cycle 2%. 2. Pulse Test: Pulse Width Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V ...

Page 3

MAC08BT1, MAC08MT1 Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) (+) MT2 Quadrant II (− GATE MT1 REF I − GT (−) MT2 Quadrant III (− GATE MT1 REF MT2 NEGATIVE (Negative Half Cycle) ...

Page 4

INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) T Figure 2. On-State Characteristics 110 100 180 60 120 50 MINIMUM FOOTPRINT ...

Page 5

CONDUCTION 0.7 ANGLE 0.6 120 0.5 0.4 = 180 0.3 dc 0.2 0 0.1 0.2 0.3 0.4 0 RMS ON-STATE CURRENT (AMPS) T(RMS) Figure 8. Power Dissipation 200 V RMS ADJUST FOR I ...

Page 6

MAIN TERMINAL #2 POSITIVE 40 30 MAIN TERMINAL #1 POSITIVE 20 10 100 1000 R , GATE − MAIN TERMINAL 1 RESISTANCE (OHMS) G Figure 13. Exponential Static dv/dt versus Gate − Main Terminal 1 Resistance 6.0 5.0 ...

Page 7

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords