T1250H-6G-TR STMicroelectronics, T1250H-6G-TR Datasheet - Page 5
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T1250H-6G-TR
Manufacturer Part Number
T1250H-6G-TR
Description
TRIAC 12A 600V HI TEMP D2PAK
Manufacturer
STMicroelectronics
Series
Snubberless™r
Datasheet
1.T1235H-6G-TR.pdf
(10 pages)
Specifications of T1250H-6G-TR
Triac Type
Alternistor - Snubberless
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
75mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
120A, 126A
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1V
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Current - On State (it (rms) (max)
12A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8059-2
T1250H-6G-TR
T1250H-6G-TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
T1250H-6G-TR
Manufacturer:
STMicroelectronics
Quantity:
1 884
T1235H, T1250H Series
Figure 9.
Figure 11. Leakage current versus junction
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
0.1
50
V
V
DRM
DRM
Relative variation of critical rate of
decrease of main current (dI/dt)c
versus reapplied (dV/dt)c
(typical values)
temperature for different values of
blocking voltage (typical values)
=V
=V
RRM
RRM
75
=200 V
=200 V
1.0
V
V
DRM
DRM
(dV/dt)
=V
=V
RRM
RRM
T
=400 V
=400 V
j
C
(°C)
100
(V/µs)
V
V
DRM
DRM
10.0
=V
=V
RRM
RRM
=600 V
=600 V
125
100.0
150
Figure 10. Relative variation of critical rate of
Figure 12. Variation of thermal resistance
8
7
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
25
0
5
50
decrease of main current versus
junction temperature
junction to ambient versus copper
surface under tab (Epoxy printed
circuit board FR4,
copper thickness = 35 µm)
10
15
75
T
S
j
CU
(°C)
20
(cm²)
100
25
Characteristics
30
125
35
D²PAK
150
40
5/10