BTA216-600D,127 NXP Semiconductors, BTA216-600D,127 Datasheet - Page 3
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BTA216-600D,127
Manufacturer Part Number
BTA216-600D,127
Description
TRIAC 3Q 600V 16A 5MA TO220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BTA216-600D127.pdf
(6 pages)
Specifications of BTA216-600D,127
Package / Case
TO-220AB-3
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
5mA
Current - Non Rep. Surge 50, 60hz (itsm)
140A, 150A
Current - On State (it (rms)) (max)
16A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
16A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
150 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
5 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.5 V @ 20 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-1779
934056003127
BTA216-600D
934056003127
BTA216-600D
Philips Semiconductors
April 2002
Three quadrant triacs
guaranteed commutation
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
25
20
15
10
150
100
1000
5
0
on-state current I
50
100
0
0
10
Ptot / W
10us
1
ITSM / A
ITSM / A
dI /dt limit
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
T
100us
5
1
T(RMS)
TSM
Number of cycles at 50Hz
10
TSM
, versus number of cycles, for
IT(RMS) / A
, where
, versus pulse width t
10
1ms
T / s
I
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
p
= conduction angle.
100
20ms.
10ms
T
T
15
Tmb(max) / C
tot
120
90
60
30
, versus rms
= 180
I TSM
I TSM
time
time
p
100ms
, for
20
1000
95
101
107
113
119
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
20
15
10
Fig.4. Maximum permissible rms current I
GT
5
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
50
40
30
20
10
IT(RMS) / A
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
BTA216 series D, E and F
0.1
surge duration / s
BT139
Tj / C
Tmb / C
50
50
mb
Product specification
1
100
99˚C.
100
99 C
mb
Rev 2.000
T(RMS)
.
150
10
150
,
j
.