T610H-6T STMicroelectronics, T610H-6T Datasheet - Page 5

• Manufacturer Part Number: T610H-6T
• Description: HIGH TEMP 6A SENSITIVE TRIACS
• Manufacturer: STMicroelectronics

Specifications of T610H-6T

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 25mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 60A, 63A
• Current - On State (it (rms)) (max): 6A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 6A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• On-state Rms Current (it Rms): 6 A
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.5 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9014-5

T610H
Figure 11. Relative variation of critical rate of
Figure 13. Variation of leakage current versus
4
3
2
1
0
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
0.1
25
V
V
DRM
DRM
decrease of main current versus
reapplied dV/dt (typical values)
junction temperature for different
values of blocking voltage
=V
=V
RRM
RRM
50
=200 V
=200 V
1.0
V
V
DRM
DRM
=V
=V
(dV/dt)
RRM
RRM
=400 V
=400 V
75
C
T
j
(V/µs)
(°C)
V
V
DRM
DRM
=V
=V
RRM
RRM
100
10.0
=600 V
=600 V
125
Doc ID 15713 Rev 1
100.0
150
Figure 12. Relative variation of static dV/dt
Figure 14. Acceptable case to ambient thermal
15
14
13
12
11
10
70
65
60
55
50
45
40
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
0
200
25
immunity versus junction
temperature
resistance versus repetitive peak
off-state voltage
50
300
75
V
T
AC PEAK
j
(°C)
400
(V)
100
500
Characteristics
R
125
th(j-c)
V
T
D
J
=150 °C
=V
=1.8 °C/W
R
=400 V
150
600
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