T810H-6T STMicroelectronics, T810H-6T Datasheet - Page 3

• Manufacturer Part Number: T810H-6T
• Description: HIGH TEMP 8A SENSITIVE TRIACS
• Manufacturer: STMicroelectronics

Specifications of T810H-6T

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 25mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 80A, 84A
• Current - On State (it (rms)) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 8A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• On-state Rms Current (it Rms): 8 A
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.5 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9012-5

T810H
Table 4.
1. for both polarities of A2 referenced to A1.
Table 5.
Figure 1.
Symbol
10
V
9
8
7
6
5
4
3
2
1
0
V
R
I
I
DRM
RRM
0
t0
Symbol
T
d
R
R
(1)
(1)
(1)
th(j-a)
th(j-c)
1
Static characteristics
Thermal resistance
Maximum power dissipation versus
on-state rms current (full cycle)
I
Threshold voltage
Dynamic resistance
V
V
V
TM
DRM
D
D
2
/V
/V
= 11.3 A, t
R
R
Junction to case (AC)
Junction to ambient
= V
= 400 V (at peak mains voltage) T
= 200 V (at peak mains voltage) T
3
RRM
I
T(RMS)
p
4
(A)
= 380 µs
5
6
Test conditions
S = 1 cm
7
Doc ID 15714 Rev 1
Parameter
8
2
T
T
T
T
T
j
j
j
j
j
j
j
= 25 °C
= 150 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
Figure 2.
10
D
D
TO-220AB
9
8
7
6
5
4
3
2
1
0
2
2
0
PAK / TO-220AB
PAK
25
On-state rms current versus case
temperature (full cycle)
50
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
T
C
(°C)
75
Value
100
1.60
45
60
Value
0.80
55.0
1.5
3.1
2.5
2.0
Characteristics
5
125
°C/W
Unit
Unit
mΩ
mA
µA
150
V
V
3/10