BT137S-600E,118 NXP Semiconductors, BT137S-600E,118 Datasheet - Page 2

• Manufacturer Part Number: BT137S-600E,118
• Description: TRIAC 600V 8A TO220AB
• Manufacturer: NXP Semiconductors
• Type: TRIACr

Specifications of BT137S-600E,118

• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 20mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 65A, 71A
• Current - On State (it (rms)) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 8A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 71 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 20 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Hold Current: 20mA
• Gate Trigger Current (max): 25mA
• Gate Trigger Voltage (max): 1.5V
• Package Type: DPAK
• Peak Repeat Off Current: 500uA
• Peak Surge On-state Current (max): 71A
• On State Voltage(max): 1.65@10AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3661-2; 934049430118; BT137S-600E /T3

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
sensitive gate
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
D
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
CONDITIONS
full cycle
pcb (FR4) mounted; footprint as in Fig.14
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; gate open circuit
I
dI
T
TM
D
D
D
D
D
D
DM
G
= 10 A
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 12 A; V
= 67% V
DRM(max)
T
GT
GT
T
D
T
DRM(max)
= 0.1 A
= 0.1 A
; T
= 0.1 A
= 0.1 A
= V
= 0.1 A; T
j
2
= 125 ˚C
DRM(max)
; T
j
= 125 ˚C;
j
; I
= 125 ˚C
G
= 0.1 A;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
MIN.
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BT137S series E
TYP.
TYP.
TYP.
2.5
4.0
5.0
3.0
3.0
4.0
2.5
1.3
0.7
0.4
0.1
75
11
14
50
2
-
-
Product specification
MAX.
MAX.
MAX.
1.65
2.0
2.4
1.5
0.5
10
10
10
25
25
35
25
35
20
-
-
-
-
Rev 1.400
UNIT
UNIT
UNIT
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s