BT136S-800E,118 NXP Semiconductors, BT136S-800E,118 Datasheet - Page 2
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BT136S-800E,118
Manufacturer Part Number
BT136S-800E,118
Description
TRIAC 800V 4A DPAK
Manufacturer
NXP Semiconductors
Datasheet
1.BT136S-800E118.pdf
(6 pages)
Specifications of BT136S-800E,118
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Triac Type
Logic - Sensitive Gate
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
25A, 27A
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
4A
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
27 A
On-state Rms Current (it Rms)
4 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.7 V
Gate Trigger Current (igt)
11 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.4 V
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3655-2
934049340118
BT136S-800E /T3
934049340118
BT136S-800E /T3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT136S-800E,118
Manufacturer:
P-DUKE
Quantity:
1 000
Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
sensitive gate
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
D
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
CONDITIONS
full cycle
pcb (FR4) mounted; footprint as in Fig.14
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; gate open circuit
I
dI
T
TM
D
D
D
D
D
D
DM
G
= 5 A
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 6 A; V
= 67% V
DRM(max)
D
T
GT
GT
T
T
DRM(max)
= V
= 0.1 A
= 0.1 A
; T
= 0.1 A
= 0.1 A
= 0.1 A; T
j
2
DRM(max)
= 125 ˚C
; T
j
; I
= 125 ˚C;
j
G
= 125 ˚C
= 0.1 A;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
MIN.
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BT136S series E
TYP.
TYP.
TYP.
2.5
4.0
5.0
3.0
2.5
4.0
2.2
1.4
0.7
0.4
0.1
75
11
10
50
2
-
-
Product specification
MAX.
MAX.
MAX.
1.70
3.0
3.7
1.5
0.5
10
10
10
25
15
20
15
20
15
-
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s