BT136S-600,118 NXP Semiconductors, BT136S-600,118 Datasheet - Page 2

• Manufacturer Part Number: BT136S-600,118
• Description: TRIAC 600V 4A DPAK
• Manufacturer: NXP Semiconductors

Specifications of BT136S-600,118

• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Triac Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 25A, 27A
• Current - On State (it (rms)) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 4A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 27 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 70 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.7 V @ 5 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3652-2; 934048960118; BT136S-600 /T3

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
D
com
/dt
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
full cycle
pcb (FR4) mounted; footprint as in Fig.14
CONDITIONS
V
V
V
I
V
V
T
V
T
CONDITIONS
BT136S (or BT136M)-
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
I
T
T(RMS)
TM
G
j
j
j
D
D
D
D
D
D
DM
DM
com
= 5 A
= 125 ˚C
= 125 ˚C
= 125 ˚C; exponential
= 0.1 A; dI
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 6 A; V
= 67% V
= 400 V; T
/dt = 1.8 A/ms; gate
= 4 A;
DRM(max)
D
T
GT
GT
T
G
T
DRM(max)
= V
= 0.1 A
= 0.1 A
;
/dt = 5 A/ s
= 0.1 A
= 0.1 A
= 0.1 A;
j
BT136S-
= 95 ˚C;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
2
DRM(max)
;
;
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
-
-
100
...
-
-
TYP.
MIN.
1.4
0.7
0.4
0.1
11
30
16
5
8
7
5
7
5
...F
50
MIN.
-
-
-
-
-
35
35
35
70
20
30
20
30
15
...
MAX.
TYP.
TYP.
1.70
250
1.5
0.5
75
50
BT136S series
2
-
-
-
Product specification
...F
25
25
25
70
20
30
20
30
15
MAX.
MAX.
3.0
3.7
-
-
-
-
Rev 1.300
UNIT
UNIT
UNIT
V/ s
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s