BTB12-800BW3G ON Semiconductor, BTB12-800BW3G Datasheet - Page 2

• Manufacturer Part Number: BTB12-800BW3G
• Description: TRIAC 12A 50MA 800V TO-220AB
• Manufacturer: ON Semiconductor
• Type: TRIACr

Specifications of BTB12-800BW3G

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A @ 60Hz
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 12A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 50mA
• Gate Trigger Current (max): 50mA
• Gate Trigger Voltage (max): 1.7V
• Package Type: TO-220AB
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 120A
• On State Voltage(max): 1.55@17AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Gate Trigger Voltage (vgt): 1.7 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 50 mA
• Forward Voltage Drop: 1.55 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTB12-800BW3G; BTB12-800BW3GOS

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Peak Repetitive Blocking Current
Peak On‐State Voltage (Note 2)
Gate Trigger Current (Continuous dc) (V
Holding Current
Latching Current (V
Gate Trigger Voltage (V
Gate Non-Trigger Voltage (T
Rate of Change of Commutating Current, See Figure 10.
Critical Rate of Rise of On-State Current
Critical Rate of Rise of Off‐State Voltage
(V
(I
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
(V
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
(Gate Open, T
(T
(V
TM
J
D
D
D
= 125°C, f = 120 Hz, I
= Rated V
= 12 V, Gate Open, Initiating Current = ±100 mA)
= 0.66 x V
= ± 17 A Peak)
DRM
J
DRM
= 125°C, No Snubber)
D
, V
, Exponential Waveform, Gate Open, T
= 24 V, I
RRM
D
Junction-to-Case
Junction-to-Ambient
= 12 V, R
G
; Gate Open)
J
= 2 x I
G
= 125°C)
= 60 mA)
Characteristic
Characteristic
L
GT
= 30 W)
, tr ≤ 100 ns)
BTB12-600BW3G, BTB12-800BW3G
D
(T
= 12 V, R
J
= 25°C unless otherwise noted; Electricals apply in both directions)
L
= 30 W)
http://onsemi.com
J
= 125°C)
2
T
T
J
J
= 25°C
= 125°C
Symbol
Symbol
(dI/dt)
I
R
R
dV/dt
I
dI/dt
DRM
V
V
V
RRM
I
T
qJC
qJA
GT
I
I
TM
GT
GD
H
L
L
/
c
2000
Min
2.5
2.5
2.5
0.5
0.5
0.5
0.2
0.2
0.2
4.0
-
-
-
-
-
-
-
-
Value
Typ
260
2.3
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.005
Max
1.55
1.0
1.7
1.1
1.1
50
50
50
50
70
90
70
50
-
-
-
-
-
°C/W
A/ms
A/ms
V/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V
V