BT131-800D,116 NXP Semiconductors, BT131-800D,116 Datasheet - Page 4
![TRIAC 800V 1A TO-92](/photos/1/39/13964/to-92_pkg_sml.jpg)
BT131-800D,116
Manufacturer Part Number
BT131-800D,116
Description
TRIAC 800V 1A TO-92
Manufacturer
NXP Semiconductors
Datasheet
1.BT131-800D116.pdf
(12 pages)
Specifications of BT131-800D,116
Package / Case
TO-92-3 (Standard Body), TO-226
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
5mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
3mA
Current - Non Rep. Surge 50, 60hz (itsm)
12.5A, 13.8A
Current - On State (it (rms)) (max)
1A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
1A
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
13.7 A
On-state Rms Current (it Rms)
1 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.7 V
Gate Trigger Current (igt)
7 mA
Holding Current (ih Max)
10 mA
Forward Voltage Drop
1.2 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058138116
Philips Semiconductors
BT131_SER_8
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(1) dI
(2) T2 G+ quadrant
(A)
(A)
10
10
10
3
2
1
0
3
2
10
10
t
f = 50 Hz; T
duration, for sinusoidal currents; maximum
values
p
T
5
2
/dt limit
20 ms
lead
10
51.2 C
1
(2)
(
10
1)
1
4
surge duration (s)
003aab042
Rev. 08 — 9 September 2005
10
10
3
Fig 5. RMS on-state current as a function of lead
I
T(RMS)
(1) T
(A)
1.2
0.8
0.4
0
temperature; maximum values
50
lead
= 51.2 C
0
10
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
50
BT131 series
I
T
51.2 C
T
j
= 25 C max
t
p
T
(s)
100
Triacs logic level
T
003aab039
003aab040
lead ( C)
I
TSM
t
10
150
1
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