BT134W-800,115 NXP Semiconductors, BT134W-800,115 Datasheet - Page 2

• Manufacturer Part Number: BT134W-800,115
• Description: TRIAC 800V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BT134W-800,115

• Package / Case: TO-261-4, TO-261AA
• Triac Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 10A, 11A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 1A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 11 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 70 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.5 V @ 2 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934000970115; BT134W-800 T/R; BT134W-800 T/R

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
September 1997
Triacs
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-sp
th j-a
D
com
/dt
/dt
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
full or half cycle
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:14
CONDITIONS
V
V
V
I
V
V
T
V
T
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
V
dI
T
T(RMS)
TM
j
j
j
D
D
D
D
D
D
DM
DM
D
com
G
= 2 A
= 125 ˚C
= 125 ˚C
= 125 ˚C; exponential
/dt = 5 A/ s;
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 1.5 A;
= V
=67% V
= 400 V; T
/dt = 1.8 A/ms; gate
= 1 A;
DRM(max)
DRM(max)
T
GT
GT
T
DRM(max)
T
= 0.1 A
= 0.1 A
;
; I
= 0.1 A
= 0.1 A
BT134W-
= 0.1 A;
BT134W-
j
G
= 95 ˚C;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
2
= 0.1 A;
;
MIN.
0.25
100
...
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
MIN.
...F
1.2
0.7
0.4
0.1
11
30
16
50
5
8
7
5
7
5
-
-
MIN.
...G
200
35
35
35
70
20
30
20
30
15
10
...
-
-
-
-
MAX.
TYP.
TYP.
1.50
156
250
BT134W series
...F
1.5
0.5
70
25
25
25
70
20
30
20
30
15
50
2
-
-
Product specification
MAX.
MAX.
...G
100
15
50
50
50
30
45
30
45
30
-
-
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
V/ s
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s