BT136-600E,127 NXP Semiconductors, BT136-600E,127 Datasheet - Page 3

• Manufacturer Part Number: BT136-600E,127
• Description: TRIAC 600V 4A SOT78
• Manufacturer: NXP Semiconductors

Specifications of BT136-600E,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 25A, 27A
• Current - On State (it (rms) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Logic - Sensitive Gate
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 27 A
• On-state Rms Current (it Rms): 4 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.7 V
• Gate Trigger Current (igt): 11 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.4 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933522910127::BT136-600E::BT136-600E

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT136-600E
Product data sheet
Symbol
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
GM
G(AV)
T
/dt
I
T(RMS)
(A)
5
4
3
2
1
0
base temperature; maximum values
RMS on-state current as a function of mounting
50
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
0
50
100
All information provided in this document is subject to legal disclaimers.
T
003aae828
mb
( C)
150
Conditions
full sine wave; T
see
full sine wave; T
t
full sine wave; T
t
t
I
T2+ G+
I
T2+ G-
I
T2- G-
I
T2- G+
over any 20 ms period
p
p
p
T
T
T
T
Rev. 04 — 1 April 2011
= 20 ms; see
= 16.7 ms; see
= 10 ms; sine-wave pulse
= 6 A; I
= 6 A; I
= 6 A; I
= 6 A; I
Figure
G
G
G
G
1; see
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
Fig 2.
Figure
I
mb
j(init)
j(init)
T(RMS)
Figure
(A)
Figure
≤ 107 °C;
12
10
= 25 °C;
= 25 °C;
8
6
4
2
0
10
G
G
G
G
duration; maximum values
f = 50 Hz
T
RMS on-state current as a function of surge
4; see
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
mb
2
5; see
2; see
≤ 107 °C
Figure 5
Figure 4
Figure 3
10
1
BT136-600E
1
surge duration
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2011. All rights reserved.
003aae830
150
Max
600
4
25
27
3.1
50
50
50
10
2
5
5
0.5
125
(s)
10
4Q Triac
Unit
V
A
A
A
A
A/µs
A/µs
A/µs
A/µs
A
V
W
W
°C
°C
3 of 13
2
s