BT136X-600D,127 NXP Semiconductors, BT136X-600D,127 Datasheet - Page 2
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BT136X-600D,127
Manufacturer Part Number
BT136X-600D,127
Description
TRIAC 600V 4A SOT186A
Manufacturer
NXP Semiconductors
Datasheet
1.BT136X-600D127.pdf
(6 pages)
Specifications of BT136X-600D,127
Package / Case
TO-220-3 Full Pack
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
10mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
5mA
Current - Non Rep. Surge 50, 60hz (itsm)
25A, 27A
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
4A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
27 A
On-state Rms Current (it Rms)
4 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.7 V
Gate Trigger Current (igt)
5 mA
Holding Current (ih Max)
10 mA
Forward Voltage Drop
1.4 V
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Off-state Capacitance Co
10 pF
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934038120127
BT136X-600D
BT136X-600D
BT136X-600D
BT136X-600D
Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
logic level
hs
SYMBOL
V
C
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
isol
T
GT
isol
th j-hs
th j-a
= 25 ˚C unless otherwise specified
D
/dt
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; R
I
dI
T
TM
D
D
D
D
D
D
DM
G
= 5 A
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 6 A; V
= 67% V
CONDITIONS
waveform;
R.H.
DRM(max)
D
T
GT
GT
T
T
DRM(max)
= V
= 0.1 A
= 0.1 A
; T
65% ; clean and dustfree
= 0.1 A
= 0.1 A
= 0.1 A; T
j
2
DRM(max)
= 125 ˚C
; T
j
; I
= 125 ˚C;
j
G
GK
= 125 ˚C
= 0.1 A;
= 1 k
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
MIN.
MIN.
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BT136X series D
TYP.
TYP.
TYP.
TYP.
10
2.0
2.5
2.5
5.0
1.6
4.5
1.2
2.2
1.2
1.4
0.7
0.4
0.1
55
-
5
2
-
-
Product specification
MAX.
2500
MAX.
MAX.
MAX.
1.70
5.5
7.2
1.5
0.5
10
10
15
10
15
10
-
5
5
5
-
-
-
-
Rev 1.400
UNIT
UNIT
UNIT
UNIT
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
pF
V
V
V
V
s