BTA312B-800E,118 NXP Semiconductors, BTA312B-800E,118 Datasheet - Page 5
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BTA312B-800E,118
Manufacturer Part Number
BTA312B-800E,118
Description
TRIAC 800V 12A D2PAK
Manufacturer
NXP Semiconductors
Datasheet
1.BTA312B-600E118.pdf
(12 pages)
Specifications of BTA312B-800E,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
95A, 105A
Current - On State (it (rms) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Triac Type
Logic - Sensitive Gate
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
105 A
On-state Rms Current (it Rms)
12 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.4 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.3 V
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934060053118::BTA312B-800E /T3::BTA312B-800E /T3
NXP Semiconductors
5. Thermal characteristics
Table 4.
BTA312B_SER_D_E_1
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
4
10
3
(1)
(2)
Rev. 01 — 26 April 2007
Conditions
half cycle; see
full cycle; see
mounted on a printed
circuit board; minimum
footprint
10
2
Figure 6
Figure 6
BTA312B series D and E
12 A Three-quadrant triacs high commutation
10
1
Min
-
-
-
Typ
-
-
55
1
P
t
p
© NXP B.V. 2007. All rights reserved.
t
Max
2.0
1.5
-
p
(s)
003aab775
t
10
Unit
K/W
K/W
K/W
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