BTA316-600E,127 NXP Semiconductors, BTA316-600E,127 Datasheet - Page 7
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BTA316-600E,127
Manufacturer Part Number
BTA316-600E,127
Description
TRIAC 600V 16A TO-220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BTA316-600D127.pdf
(12 pages)
Specifications of BTA316-600E,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
140A, 150A
Current - On State (it (rms) (max)
16A
Voltage - Gate Trigger (vgt) (max)
1.5V
Triac Type
Logic - Sensitive Gate
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
150 A
On-state Rms Current (it Rms)
16 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.4 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.3 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060077127::BTA316-600E::BTA316-600E
NXP Semiconductors
7. Dynamic characteristics
Table 6.
BTA316_SER_D_E_1
Product data sheet
Symbol Parameter
dV
dI
t
gt
Fig 7. Normalized gate trigger voltage as a function of
com
V
D
GT(25 C)
/dt
V
/dt rate of change
GT
1.6
1.2
0.8
0.4
junction temperature
rate of rise of
off-state
voltage
of
commutating
current
gate-controlled
turn-on time
50
Dynamic characteristics
0
Conditions
V
exponential waveform; gate open circuit
V
without snubber; gate open circuit
V
dV/dt = 10 V/ s; gate open circuit
V
dV/dt = 1 V/ s; gate open circuit
I
dI
TM
DM
DM
DM
DM
G
/dt = 5 A/ s
50
= 20 A; V
= 0.67
= 400 V; T
= 400 V; T
= 400 V; T
100
D
V
= V
DRM(max)
j
j
j
= 125 C; I
= 125 C; I
= 125 C; I
001aab101
T
j
DRM(max)
( C)
150
; T
Rev. 01 — 18 April 2007
j
; I
= 125 C;
T(RMS)
T(RMS)
T(RMS)
G
= 0.1 A;
= 16 A;
= 16 A;
= 16 A;
Fig 8. Normalized gate trigger current as a function of
I
GT(25 C)
I
(1) T2 G
(2) T2+ G
(3) T2+ G+
GT
BTA316 series D and E
16 A Three-quadrant triacs high commutation
3
2
1
0
junction temperature
50
Min
30
1.5
3
8
-
(1)
(2)
(3)
BTA316-600D
Typ
-
-
-
-
2
0
Max Min
-
-
-
-
-
50
60
5
8
12
-
BTA316-600E
BTA316-800E
100
Typ
-
-
-
-
2
© NXP B.V. 2007. All rights reserved.
001aac669
T
j
( C)
Max
-
-
-
-
-
150
Unit
V/ s
A/ms
A/ms
A/ms
7 of 12
s