BT139-800E,127 NXP Semiconductors, BT139-800E,127 Datasheet - Page 5

• Manufacturer Part Number: BT139-800E,127
• Description: TRIAC 600V 16A SOT78
• Manufacturer: NXP Semiconductors

Specifications of BT139-800E,127

• Package / Case: TO-220AB-3
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 45mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 155A, 170A
• Current - On State (it (rms)) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 16A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 170 A
• On-state Rms Current (it Rms): 16 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.7 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 45 mA
• Forward Voltage Drop: 1.2 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933580060127; BT139-800E; BT139-800E

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13437
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance as a function of pulse width.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
(1) Unidirectional.
(2) Bidirectional.
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
4
10
3
Rev. 03 — 23 September 2004
Conditions
full cycle;
half cycle;
in free air
10
Figure 6
Figure 6
2
10
1
(1)
(2)
Min
-
-
-
BT139 series E
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
P
Typ
-
-
60
D
1
Triacs; sensitive gate
t
p
t
p
Max
1.2
1.7
-
(s)
001aab098
t
10
Unit
K/W
K/W
K/W
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