BTA212X-800E,127 NXP Semiconductors, BTA212X-800E,127 Datasheet - Page 3

• Manufacturer Part Number: BTA212X-800E,127
• Description: TRIAC 800V 12A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BTA212X-800E,127

• Package / Case: TO-220-3 Full Pack
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 25mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 95A, 105A
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 12A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.6 V @ 17 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3732; 934056292127; BTA212X-800E

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
June 2003
Three quadrant triacs
guaranteed commutation
j
SYMBOL
dV
dI
dI
= 25 ˚C unless otherwise stated
com
com
D
/dt
/dt
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dV
open circuit
V
I
dV
open circuit
T(RMS)
T(RMS)
DM
j
DM
DM
= 110 ˚C; exponential
com
com
= 67% V
= 400 V; T
= 400 V; T
/dt = 10 V/ s; gate
/dt = 0.1 V/ s; gate
= 12 A;
= 12 A;
DRM(max)
3
BTA212X-
j
j
= 125 ˚C;
= 125 ˚C;
;
...D
1.0
3.5
30
BTA212X series D, E and F
MIN.
...E
8.0
60
16
...F
70
21
32
Product specification
MAX.
-
-
-
Rev 3.000
UNIT
A/ms
A/ms
V/ s