BTA212X-600F,127 NXP Semiconductors, BTA212X-600F,127 Datasheet - Page 2
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BTA212X-600F,127
Manufacturer Part Number
BTA212X-600F,127
Description
TRIAC 600V 12A SOT186A
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212X-600D127.pdf
(7 pages)
Specifications of BTA212X-600F,127
Package / Case
TO-220-3 Full Pack
Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
30mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
25mA
Current - Non Rep. Surge 50, 60hz (itsm)
95A, 105A
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
12A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
105 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
30 mA
Forward Voltage Drop
1.6 V @ 17 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055327127
BTA212X-600F
BTA212X-600F
BTA212X-600F
BTA212X-600F
Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
2 Device does not trigger in the T2-, G+ quadrant.
June 2003
Three quadrant triacs
guaranteed commutation
hs
SYMBOL
V
C
SYMBOL PARAMETER
R
R
j
SYMBOL
I
I
I
V
V
I
GT
L
H
D
= 25 ˚C unless otherwise stated
isol
th j-hs
th j-a
T
GT
isol
= 25 ˚C unless otherwise specified
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
2
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
CONDITIONS
V
V
V
I
V
V
T
V
T
D
T2+ G+
T2+ G-
T2- G-
D
T2+ G+
T2+ G-
T2- G-
D
D
D
j
D
= 17 A
= 125 ˚C
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
CONDITIONS
waveform;
R.H.
DRM(max)
65% ; clean and dustfree
T
GT
GT
T
T
= 0.1 A
= 0.1 A
; T
2
= 0.1 A
= 0.1 A
BTA212X-
= 0.1 A;
j
= 125 ˚C
MIN.
0.25
BTA212X series D, E and F
-
-
-
-
-
-
-
-
-
-
...D
15
25
25
15
MIN.
5
5
5
MIN.
-
-
-
-
-
MAX.
...E
1.6
1.5
0.5
TYP.
10
10
10
25
30
30
25
TYP.
-
10
55
-
-
-
Product specification
MAX.
2500
MAX.
...F
25
25
25
30
40
40
30
4.0
5.5
-
-
Rev 3.000
UNIT
UNIT
UNIT
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
pF
V
V
V
V