T1035H-6G STMicroelectronics, T1035H-6G Datasheet - Page 4

• Manufacturer Part Number: T1035H-6G
• Description: TRIAC 10A 600V HI TEMP D2PAK
• Manufacturer: STMicroelectronics
• Series: Snubberless™r

Specifications of T1035H-6G

• Triac Type: Alternistor - Snubberless
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 35mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A, 105A
• Current - On State (it (rms)) (max): 10A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Current - On State (it (rms) (max): 10A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
4/10
Figure 3.
Figure 5.
Figure 7.
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10000
10
1000
1
100
10
0.0
0
0.01
0.5
dI/dt limitation: 50 A/µs
T
25
j
=150 °C
1.0
RMS on-state current versus
ambient temperature (Epoxy
printed circuit board FR4,
copper thickness = 35 µm)
On-state characteristics (maximum
values)
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
value of I
1.5
50
0.10
T
j
p
=25 °C
2.0
< 10 ms and corresponding
2
t
T
V
t
amb
P
TM
(ms)
75
2.5
(°C)
(V)
3.0
100
1.00
3.5
Tj initial=25 °C
V
R
4.0
t0
T
d
125
j
= 34 m
I
= 0.80 V
max. :
TSM
I²t
S
CU
D²PAK
=180 °
=1 cm²
4.5
10.00
150
5.0
Figure 4.
Figure 6.
Figure 8.
1.0E+02
1.0E+01
1.0E+00
110
100
2.5
2.0
1.5
1.0
0.5
0.0
1.0E-01
90
80
70
60
50
40
30
20
10
0
-40
1
1.0E-03
I
H
-20
& I
L
I
GT
1.0E-02
T
Variation of thermal impedance
versus pulse duration
Surge peak on-state current versus
number of cycles
Repetitive
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
c
0
=125 °C
T
Non repetitive
j
initial=25 °C
20
1.0E-01
10
40
Number of cycles
T
j
1.0E+00
(°C)
t
60
P
(s)
80
1.0E+01
100
T1035H, T1050H
100
Z
Z
th(j-a)
th(j-c)
1.0E+02
120
t=20ms
One cycle
140
1.0E+03
1000
160