T810H-6G STMicroelectronics, T810H-6G Datasheet - Page 5

• Manufacturer Part Number: T810H-6G
• Description: TRIAC 8A 600V D2PAK
• Manufacturer: STMicroelectronics

Specifications of T810H-6G

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 25mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 80A, 84A
• Current - On State (it (rms)) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Current - On State (it (rms) (max): 8A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

T810H
Figure 9.
Figure 11. Relative variation of critical rate of
Figure 13. Variation of leakage current versus
100
4
3
2
1
0
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
10
0.1
1
0
V
R
25
to
d
T
T
= 55 mΩ
= 0.80 V
j
j
=150 °C
max
V
V
DRM
DRM
On-state characteristics (maximum
values)
decrease of main current versus
reapplied dV/dt (typical values)
junction temperature for different
values of blocking voltage
=V
=V
1
RRM
RRM
50
=200 V
=200 V
T
1.0
V
V
j
=25 °C
DRM
DRM
=V
=V
RRM
RRM
(dV/dt)
2
=400 V
=400 V
75
V
C
TM
T
(V/µs)
V
V
j
(°C)
(V)
DRM
DRM
=V
=V
RRM
RRM
100
3
10.0
=600 V
=600 V
125
4
Doc ID 15714 Rev 1
100.0
150
5
Figure 10. Relative variation of critical rate of
Figure 12. Relative variation of static dV/dt
Figure 14. Acceptable case to ambient thermal
15
14
13
12
11
10
60
55
50
45
40
35
30
25
20
15
10
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
5
0
9
8
7
6
5
4
3
2
1
0
200
25
25
decrease of main current versus
junction temperature
50
immunity versus junction
temperature
50
resistance versus repetitive peak
off-state voltage
300
75
75
T
j
V
(°C)
AC PEAK
T
400
j
(°C)
(V)
100
100
Characteristics
500
R
125
125
th(j-c)
V
T
D
J
=V
=150 °C
=1.6 °C/W
R
=400 V
150
150
600
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