T410H-6T STMicroelectronics, T410H-6T Datasheet - Page 4

• Manufacturer Part Number: T410H-6T
• Description: HIGH TEMP 4A SENSITIVE TRIACS
• Manufacturer: STMicroelectronics

Specifications of T410H-6T

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 25mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 40A, 42A
• Current - On State (it (rms)) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 4A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• On-state Rms Current (it Rms): 4 A
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.5 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9015-5

Characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
45
40
35
30
25
20
15
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
5
0
10
1
-50
1
0
T
Repetitive
C
V GT Q1-Q2-Q3
=141 °C
V
R
to
d
T
= 80 mΩ
= 0.80 V
-25
j
max
T
j
=150 °C
I GT Q3
Relative variation of gate trigger
current and voltage versus junction
temperature (typical values)
Surge peak on-state current
versus number of cycles
On-state characteristics
(maximum values)
I GT Q1-Q2
1
0
10
T
Non repetitive
T
j
j
25
initial=25°C
=25 °C
2
T
j
Number of cycles
(°C)
50
V
TM
(V)
3
75
100
100
t=20ms
One cycle
4
125
Doc ID 15712 Rev 1
1000
150
5
Figure 6.
Figure 8.
Figure 10. Relative variation of critical rate of
11
10
2.0
1.5
1.0
0.5
0.0
1000
9
8
7
6
5
4
3
2
1
0
100
25
10
-50
1
0.01
Sinusoidal pulse width t p < 10 ms
I H
-25
Relative variation of holding and
latching current versus junction
temperature (typical values)
Non-repetitive surge peak on-state
current and corresponding value
of I
decrease of main current versus
junction temperature
50
I L
2
0
t
0.10
dI
25
/dt limitation: 50 A/µs
75
T
T
j
(°C)
j
(°C)
50
100
75
1.00
100
I²t
125
T
j
initial=25 °C
I
t
TSM
125
P
(ms)
10.00
T410H
150
150