BTB12-600TW3G ON Semiconductor, BTB12-600TW3G Datasheet
BTB12-600TW3G
Specifications of BTB12-600TW3G
Related parts for BTB12-600TW3G
BTB12-600TW3G Summary of contents
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... BTB12-600TW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 600 V • On-State Current Rating RMS at 80°C • Uniform Gate Trigger Currents in Three Quadrants • ...
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THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated Gate Open) D DRM ...
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... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage TM I Holding Current H Quadrant II (−) I GATE I − GT Quadrant III (− ...
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I , RMS ON‐STATE CURRENT (AMP) T(RMS) Figure 1. Typical RMS Current Derating 100 TYPICAL 25° 0.1 0 0.5 1.0 1 INSTANTANEOUS ON-STATE ...
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−40 −25 − JUNCTION TEMPERATURE (°C) J Figure 6. Typical Gate Trigger Current Variation 100 −40 −25 − ...
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... U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 STYLE 4: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BTB12−600TW3/D ...