MAC12HCNG ON Semiconductor, MAC12HCNG Datasheet

THYRISTOR TRIAC 12A 800V TO220AB

MAC12HCNG

Manufacturer Part Number
MAC12HCNG
Description
THYRISTOR TRIAC 12A 800V TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MAC12HCNG

Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
60mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
100A @ 60Hz
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Package / Case
TO-220-3
Current - On State (it (rms) (max)
12A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAC12HCNG
Manufacturer:
FSC
Quantity:
20 000
MAC12HCD, MAC12HCM,
MAC12HCN
Triacs
Silicon Bidirectional Thyristors
motor controls, heating controls or dimmers; or wherever full−wave,
silicon gate−controlled devices are needed.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off-State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On-State RMS Current
(All Conduction Angles; T
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
Circuit Fusing Consideration (t = 8.33 ms)
Peak Gate Power
(Pulse Width ≤ 1.0 ms, T
Average Gate Power
(t = 8.3 ms, T
Operating Junction Temperature Range
Storage Temperature Range
Designed primarily for full-wave ac control applications, such as
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
High Commutating di/dt and High Immunity to dv/dt @ 125°C
Minimizes Snubber Networks for Protection
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability − 100 Amperes
Industry Standard TO-220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
Pb−Free Packages are Available*
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
J
DRM
= − 40 to 125°C, Sine Wave,
and V
C
RRM
= 80°C)
Rating
for all types can be applied on a continuous basis. Blocking
(T
C
J
C
J
= 80°C)
= 125°C)
= 25°C unless otherwise noted)
= 80°C)
MAC12HCM
Preferred Device
MAC12HCD
MAC12HCN
Symbol
I
P
V
V
T(RMS)
I
P
T
TSM
G(AV)
DRM,
RRM
I
T
GM
stg
2
J
t
−40 to +125
−40 to +150
Value
0.35
400
600
800
100
12
41
16
1
A
Unit
2
°C
°C
W
W
V
A
A
sec
MAC12HCD
MAC12HCDG
MAC12HCM
MAC12HCMG
MAC12HCN
MAC12HCNG
Preferred devices are recommended choices for future use
and best overall value.
1
2
Device
3
1
2
3
4
MT2
ORDERING INFORMATION
400 thru 800 VOLTS
12 AMPERES RMS
x
A
Y
WW
G
http://onsemi.com
PIN ASSIGNMENT
CASE 221A−09
= D, M, or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
TO−220AB
TO−220AB
TO−220AB
TO−220AB
TO−220AB
TO−220AB
TO−220AB
STYLE 4
(Pb−Free)
(Pb−Free)
(Pb−Free)
TRIACS
Package
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
MAC12HCxG
G
MARKING
DIAGRAM
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MT1
AYWW
Shipping
MAC12HC/D

Related parts for MAC12HCNG

MAC12HCNG Summary of contents

Page 1

... G(AV) °C T −40 to +125 J °C T −40 to +150 stg MAC12HCD MAC12HCDG MAC12HCM MAC12HCMG MAC12HCN MAC12HCNG Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com TRIACS 12 AMPERES RMS 400 thru 800 VOLTS MT2 MT1 G MARKING DIAGRAM MAC12HCxG AYWW TO− ...

Page 2

MAC12HCD, MAC12HCM, MAC12HCN THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated Gate Open) ...

Page 3

... MAC12HCD, MAC12HCM, MAC12HCN Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage TM I Holding Current H Quadrant II (−) I ...

Page 4

MAC12HCD, MAC12HCM, MAC12HCN 100 −40 −25 − JUNCTION TEMPERATURE (°C) J Figure 1. Typical Gate Trigger Current versus Junction Temperature 100 MT2 NEGATIVE MT2 POSITIVE 10 1 −40 ...

Page 5

MAC12HCD, MAC12HCM, MAC12HCN 100 TYPICAL @ T = 25°C J MAXIMUM @ T 10 MAXIMUM @ T = 25° 0.1 0 0.5 1 1 INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) T Figure 7. Typical On-State ...

Page 6

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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