MAC228A8TG ON Semiconductor, MAC228A8TG Datasheet - Page 2
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MAC228A8TG
Manufacturer Part Number
MAC228A8TG
Description
THYRISTOR TRIAC 8A 600V TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.MAC228A8G.pdf
(5 pages)
Specifications of MAC228A8TG
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
5mA
Current - Non Rep. Surge 50, 60hz (itsm)
80A @ 60Hz
Current - On State (it (rms)) (max)
8A
Voltage - Gate Trigger (vgt) (max)
2V
Package / Case
TO-220-3
Current - On State (it (rms) (max)
8A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MAC228A8TGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MAC228A8TG
Manufacturer:
ON
Quantity:
8 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Peak Repetitive Off−State Voltage
On-State RMS Current, (T
Peak Non−Repetitive Surge Current
Circuit Fusing Considerations, (t = 8.3 ms)
Peak Gate Current, (t v 2 ms, T
Peak Gate Voltage, (t v 2 ms, T
Peak Gate Power, (t v 2 ms, T
Average Gate Power, (t v 8.3 ms, T
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Peak Repetitive Blocking Current, (V
Peak On-State Voltage, (I
Gate Trigger Current (Continuous DC), (V
Gate Trigger Voltage (Continuous DC), (V
Gate Non−Trigger Voltage (Continuous DC), (V
Holding Current, (V
Gate−Controlled Turn−On Time, (V
Critical Rate of Rise of Off-State Voltage,
Critical Rate of Rise of Commutation Voltage, (V
that the voltage ratings of the devices are exceeded.
(T
(One Full Cycle Sine Wave, 60 Hz, T
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
All Four Quadrants
(V
Commutating di/dt = 4.1 A/ms, Gate Unenergized, T
DRM
J
D
= −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
= Rated V
and V
RRM
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
D
= 12 Vdc, Initiating Current = "200 mA, Gate Open)
, Exponential Waveform, T
(T
TM
J
C
= 25°C unless otherwise noted)
= 80°C) − Full Cycle Sine Wave 50 to 60 Hz
= "11 A Peak, Pulse Width v 2 ms, Duty Cycle v 2%)
C
C
C
= 80°C)
= 80°C)
= 80°C)
,
D
(Note 1)
Characteristic
Characteristic
Characteristic
C
D
= Rated V
= 80°C)
= Rated V
J
(T
D
D
= 110°C)
C
= 12 V, R
= 12 V, R
= 25°C unless otherwise noted; Electricals apply in both directions)
D
DRM
D
C
DRM
= 12 V, T
= Rated V
= 110°C)
, I
, V
L
L
TM
= 100 W)
= 100 W)
C
RRM
= 16 A Peak, I
= 80°C)
http://onsemi.com
C
; Gate Open) T
= 110°C, R
DRM
, I
TM
2
= 11.3 A,
G
L
MAC228A10
= 100 W)
= 30 mA)
MAC228A6
MAC228A8
MAC228A4
T
J
J
= 110°C
= 25°C
Symbol
Symbol
Symbol
dv/dt(c)
I
P
V
V
T(RMS)
I
R
R
I
dv/dt
I
V
P
V
DRM
V
V
I
T
RRM
TSM
G(AV)
DRM,
I
RRM
I
GM
T
T
GT
I
t
qJC
GM
GM
stg
−
qJA
GD
2
TM
GT
gt
H
L
J
t
,
Min
0.2
−
−
−
−
−
−
−
−
−
−
−
−40 to 150
−40 to 110
Value
Value
"2.0
"10
62.5
200
400
600
800
260
Typ
8.0
0.5
8.0
2.0
1.5
5.0
80
26
20
25
−
−
−
−
−
−
−
−
−
Max
2.0
1.8
5.0
2.0
2.5
10
10
15
−
−
−
−
°C/W
°C/W
Unit
Unit
Unit
V/ms
V/ms
in lb
A
mA
mA
mA
°C
°C
°C
mA
ms
W
W
V
A
A
A
V
V
V
V
2
s